COMPACT ANALYZER AND GONIOMETER FOR ANGLE-RESOLVED ELECTRON SPECTROSCOPYSTOFFEL NG; MARGARITONDO G.1982; REV. SCI. INSTRUM.; ISSN 0034-6748; USA; DA. 1982; VOL. 53; NO 1; PP. 18-21; BIBL. 6 REF.Article

PHOTOIONIZATION FROM SN4D IN SNS₂: EVIDENCE FOR A "SECOND THRESHOLD"STOFFEL NG; MARGARITONDO G.1980; PHYS. LETT. SECT. A; ISSN 0375-9601; NLD; DA. 1980; VOL. 75; NO 4; PP. 319-320; BIBL. 6 REF.Article

NEAREST-NEIGHBOR BACKSCATTERING EFFECTS IN ANGLE-INTEGRATED PHOTOEMISSION SPECTROSCOPY OF CORE LEVELSMARGARITONDO G; STOFFEL NG.1979; PHYS. REV. LETTERS; USA; DA. 1979; VOL. 42; NO 23; PP. 1567-1570; BIBL. 19 REF.Article

CONDUCTION AND VALENCE BAND STATES IN ZNIN₂S₄: A PHOTOEMISSION STUDY WITH SYNCHROTRON RADIATIONMARGARITONDO G; STOFFEL NG; LEVY F et al.1980; J. PHYS. C: SOLID STATE PHYS.; ISSN 0022-3719; GBR; DA. 1980; VOL. 13; NO 2; PP. 277-281; BIBL. 7 REF.Article

CHEMICAL BONDS AN ELECTRONIC STATES IN ANTIMONY TRIIODIDEMARGARITONDO G; STOFFEL NG; LEVY F et al.1979; SOLID STATE COMMUNIC.; GBR; DA. 1979; VOL. 29; NO 11; PP. 797-799; BIBL. 12 REF.Article

PHOTON POLARISATION EFFECTS IN ANGLE-INTEGRATED PHOTOEMISSION SPECTROSCOPY. A SIMPLE EXPERIMENTAL GEOMETRYMARGARITONDO G; WEAVER JH; STOFFEL NG et al.1979; J. PHYS. E; GBR; DA. 1979; VOL. 12; NO 7; PP. 662-664; BIBL. 6 REF.Article

SECONDARY ILLUMINATION EFFECTS IN THE PHOTOEMISSION SPECTRA OF GAAS AND CDSMARGARITONDO G; BRILLSON LJ; STOFFEL NG et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 35; NO 3; PP. 277-280; BIBL. 15 REF.Article

INTERFACE MORPHOLOGY STUDIED BY ANGLE-RESOLVED SOFT-X-RAY PHOTOEMISSION: AI ISLANDS ON GAAS (110)STOFFEL NG; KELLY MK; MARGARITONDO G et al.1983; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1983; VOL. 27; NO 10; PP. 6561-6563; BIBL. 12 REF.Article

ATOMIC MODULATION OF INTERDIFFUSION AT AU-GAAS INTERFACES = MODULATION ATOMIQUE DE L'INTERDIFFUSION AUX INTERFACES AU-GAASBRILLSON LJ; MARGARITONDO G; STOFFEL NG et al.1980; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1980; VOL. 44; NO 10; PP. 667-670; BIBL. 12 REF.Article

DIRECT EVIDENCE FOR D-BAND INVOLVEMENT IN THE TISE₂ PHASE TRANSITIONSTOFFEL NG; LEVY F; BERTONI CM et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 41; NO 1; PP. 53-56; BIBL. 11 REF.Article

ABRUPTNESS OF SEMICONDUCTOR-METAL INTERFACESBRILLSON LJ; BRUCKER CF; STOFFEL NG et al.1981; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1981; VOL. 46; NO 13; PP. 838-841; BIBL. 12 REF.Article

MICROSCOPIC INVESTIGATION OF THE BAND DISCONTINUITIES AT THE SILICON-GERMANIUM HETEROJUNCTION INTERFACEMARGARITONDO G; STOFFEL NG; KATNANI AD et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 3; PP. 215-217; BIBL. 21 REF.Article

PHOTON-ENERGY DEPENDENCE OF THE CORE-LEVEL PEAK INTENSITY IN PHOTOELECTRON SPECTRA: A STUDY OF THE EXTENDED FINE STRUCTUREMARGARITONDO G; KATNANI AD; STOFFEL NG et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 6; PP. 2777-2784; BIBL. 31 REF.Article

ATOMIC-INTERLAYER-CONTROLLED DIFFUSION AT SEMICONDUCTOR-SEMICONDUCTOR INTERFACESMARGARITONDO G; STOFFEL NG; KATNANI AD et al.1980; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1980; VOL. 37; NO 10; PP. 917-918; BIBL. 8 REF.Article

PHOTOEMISSION DETERMINATION OF THE OCCUPIED D-BAND POSITION FOR CDCR₂SE₄ AND CDCR₂S₄MINISCALCO WJ; MCCOLLUM BC; STOFFEL NG et al.1982; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 4; PP. 2947-2950; BIBL. 19 REF.Article

WAVEFUNCTION SYMMETRIES AND BINDING ENERGIES IN GAS_XSE_1-X COMPOUNDSMARGARITONDO G; KATNANI AD; STOFFEL NG et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 33; NO 6; PP. 641-644; BIBL. 12 REF.Article

NATURE OF THE BAND DISCONTINUITIES AT SEMICONDUCTOR HETEROJUNCTION INTERFACESMARGARITONDO G; KATNANI AD; STOFFEL NG et al.1982; SOLID STATE COMMUNICATIONS; ISSN 0038-1098; USA; DA. 1982; VOL. 43; NO 3; PP. 163-166; BIBL. 19 REF.Article

COMPOSITION DEPENDENCE OF THE VALENCE-BAND STATES IN III-VI AND IV-VI SOLID SOLUTIONSMARGARITONDO G; LEVY F; STOFFEL NG et al.1980; PHYS. REV. B; USA; DA. 1980; VOL. 21; NO 12; PP. 5768-5774; BIBL. 19 REF.Article

PAIRED-ANION LIGAND EFFECTS IN THE VALENCE BAND OF ZRS₃ AND ZRSE₃MARGARITONDO G; KATNANI AD; STOFFEL NG et al.1980; J. ELECTRON SPECTROSC. RELAT. PHENOMENA; NLD; DA. 1980; VOL. 20; NO 1-2; PP. 69-74; BIBL. 13 REF.Article

A SOLUTION OF THE CORE-EXCITON ISSUE FOR SILICON AND GERMANIUMMARGARITONDO G; FRANCIOSI A; STOFFEL NG et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 4; PP. 297-300; BIBL. 14 REF.Article

CHEMICAL BASIS FOR INP-METAL SCHOTTKY-BARRIER FORMATIONBRILLSON LJ; BRUCKER CF; KATNANI AD et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 38; NO 10; PP. 784-786; BIBL. 12 REF.Article

DENSITY-OF-STATES CHANGES NEAR THE FERMI LEVEL AND THE LATTICE INSTABILITY IN TISE₂MARGARITONDO G; BERTONI CM; WEAVER JH et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 8; PP. 3765-3769; BIBL. 27 REF.Article

OPTICAL RADIATION FROM PHOTON-STIMULATED DESORPTION OF EXCITED ATOMSTOLK NH; TRAUM MM; KRAUS JS et al.1982; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1982; VOL. 49; NO 11; PP. 812-815; BIBL. 9 REF.Article

EVIDENCE FOR SEMICONDUCTOR-SEMICONDUCTOR INTERFACE STATES: SI(111) (2 X 1)-GEPERFETTI P; STOFFEL NG; KATNANI AD et al.1981; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 10; PP. 6174-6177; BIBL. 14 REF.Article